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Tescan QuiiN for Precise Multi-Ion Implantation

Amber X 2 hero image
Amber X 2 hero image

Tescan QuiiN is a focused ion beam (FIB) system designed for precise multi-ion implantation and quantum research. It combines isotope selection, in-situ annealing, and dose control to create and manipulate defect centers at the nanoscale. Researchers can explore new material properties, repair lattice damage, and enable controlled quantum states with confidence.

  • Unprecedented milling precision

  • Seamless isotope and ion species selection using Wien filter

  • Wide selection of ion species including N, Ar, O, He, Xe, Au, Ge, and Si

  • Repair unwanted lattice damage and activate dopants with in-situ annealing up to 950 °C

  • Avoid unwanted artifacts and implantation irregularities with precise dose control

  • Fine-tune ion implantation depth

  • Single-ion implantation

WHERE Tescan QuiiN MAKES THE DIFFERENCE

Unprecedented milling precision

Modify surfaces and structures with fine control of beam parameters and isotope selection.

Seamless ion species selection

Switch between multiple ion species or isotopes without changing the source, supporting diverse experimental setups.

In-situ annealing

Activate dopants and repair lattice damage directly inside the chamber, with heating up to 950 °C.

Precise dose control

Avoid artifacts and irregularities with accurate dose management and neutral charge removal.

Controlled implantation depth

Fine-tune implantation depth by adjusting acceleration voltage from 3–30 keV.

Single-ion implantation

Implant a single ion of any species by adjusting the dose precisely prior to the experiment using an ultra-sensitive current measurement system

Software Overview

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QuiiN IN QUANTUM RESEARCH

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TESCAN QuiiN for Materials Science

Technical specification
SEM column (optional)

Resolution at 25 keV: 4 nm

FIB column

Maximum filtered beam current: 15 nA (LMAIS)

Resolution at 30 keV: 5 nm (LMAIS)

Maximum filtered beam current: 35 nA (Plasma source)

Resolution at 30 keV: 40 nm (Plasma source)

Chamber

Number of ports: 20+

Maximum sample size: 180 × 180 × 92 mm

Heating stage (optional)

Maximum temperature: 950 °C

Cooling control: Closed-loop circuit

Temperature slope: Programmable from 0.01 °C/s to 3 °C/s

SEM column (optional)

Resolution at 25 keV: 4 nm

FIB column

Maximum filtered beam current: 15 nA (LMAIS)

Resolution at 30 keV: 5 nm (LMAIS)

Maximum filtered beam current: 35 nA (Plasma source)

Resolution at 30 keV: 40 nm (Plasma source)

Chamber

Number of ports: 20+

Maximum sample size: 180 × 180 × 92 mm

Heating stage (optional)

Maximum temperature: 950 °C

Cooling control: Closed-loop circuit

Temperature slope: Programmable from 0.01 °C/s to 3 °C/s

AMBER-X2

GET IN Touch

Contact us

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Where can you find us:

Tescan
Libušina třída 21
623 00 Brno
Czech Republic

130405923 us US 37.09024 -95.712891 25.3575 29.349345 20.67957527 42.082797 39.91384763 -33.693421 13.93320106 3.039986586 31.997988 38.050985 47.579533 48.1485965 58.375799 54.663142 19.195447 56.975106 50.493053 45.868592 10.79556993 44.35660598 43.2371604 55.536415 14.557577179752773 32.100937 -6.116829 -6.212299277967318 23.7104 -33.471062 31.998740087 -23.69149395 43.462349 51.529848 49.1893523 49.197486 25.072375 31.075811 1.299027 40.676979 52.30150662 51.013813 35.684121 37.479653 52.246622 40.581349 39.911632 -26.1811371 41.818215 33.429928 -12.08688

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