Tescan AMBER X 2 for Semiconductors

Uncover the electrical and structural details of today’s most advanced devices with Tescan AMBER X 2 Plasma FIB-SEM. Purpose-built for semiconductor applications, AMBER X 2 combines Xe plasma FIB with proprietary Nanoflat, Chase, and C-Maze chemistries to deliver uniform, artifact-free delayering at sub-10 nm nodes.

The system ensures you have reproducible workflows across logic, memory, and I/O regions, supporting electrical fault isolation, failure analysis, and transistor-level probing.

Perform artifact-free delayering with Nanoflat, Chase, and C-Maze chemistries

Protect device integrity using low-kV Xe Plasma FIB milling

Control every step with end-point detection and live monitoring

Integrate delayering with in situ nanoprobing in a single workflow

Deprocess I/O and thick metal layers using low angle polishing

Resolve critical details with BrightBeam™ UHR SEM imaging at sub-500 eV

HOW Tescan AMBER X 2 SUPPORTS YOUR SEMICONDUCTOR ANALYSIS

Deliver Reliable Sub-10 nm Delayering

Achieve uniform, artifact-free results with Nanoflat, Chase, and C-Maze chemistries designed for advanced nodes.

Preserve Device Integrity

Maintain electrical properties during preparation with low-kV Xe Plasma FIB milling and inert ions.

Control Processes with Confidence

Rely on end-point detection and live monitoring to stop precisely at the target layer.

Connect Workflows Seamlessly

Combine automated delayering and in situ nanoprobing in one Plasma FIB-SEM system.

Access Planar I/O Layers

Ensure flat, reproducible deprocessing of thick metal and I/O regions using low-angle polishing with a clamp holder.

Resolve Clarity at Every Scale

Resolve transistor-level details with BrightBeam™ UHR SEM optics at sub-500 eV.

AMBER X 2

FOR SEMICONDUCTOR RESEARCH APPLICATIONS

Tescan AMBER X 2 in Semiconductors

With AMBER X 2, you can prepare devices for electrical fault isolation, yield analysis, and transistor characterization without compromising integrity.

Automated delayering workflows and field-proven chemistries help you maintain consistency across logic, memory, and I/O regions. This supports reliable process development and failure diagnostics at today’s most advanced nodes.

Tescan AMBER X 2 in Failure Analysis

Failure analysis engineers benefit from streamlined workflows that link delayering, imaging, and electrical probing. AMBER X 2 enables you to reach the layer of interest faster, isolate defects with precision, and confirm root causes with reproducible results.

Tescan AMBER X 2 in Device Characterization

For device engineers, AMBER X 2 provides the tools to link structural and electrical insights in one platform. Whether probing PMOS and NMOS transistors or investigating interconnect behavior, you gain confidence in your data with stable workflows and ultra-high-resolution SEM imaging.

Tescan DELAYERING™

AUTOMATION THAT IMPROVES CONSISTENCY

Tescan AMBER X 2 is designed to work seamlessly with the Tescan Delayering™ module. Automated recipe control and factory-defined templates let you carry out repeatable delayering across logic, memory, and I/O regions, reducing operator variability and ensuring consistent results.

The system integrates advanced monitoring tools, including end-point detection and live signal tracking, so you can stop precisely at the target layer without over- or under-milling. Proprietary Nanoflat, Chase, and C-Maze chemistries are optimized within the software, giving you reproducible outcomes at sub-10 nm nodes.

For challenging applications, AMBER X 2 supports low angle polishing with a dedicated clamp holder, delivering planar deprocessing of thick metal and I/O layers. Together, these capabilities streamline semiconductor workflows, helping you move efficiently from delayering to imaging and in situ nanoprobing in a single Plasma FIB-SEM platform.

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TESCAN AMBER X 2 for Semiconductors

Technical specification

SEM	Resolution: Ultra-high resolution at sub-100 eV with BrightBeam™ optics
SEM	Imaging modes: Secondary electrons, BSE, Passive Voltage Contrast SEM
FIB Preparation Process	Ion source: Mistral™ Xe⁺ plasma ion source (ECR type), source lifetime not limited
	Max current: >3.3 µA at 30 keV for high-throughput large-area milling
	Low keV capability: Gentle delayering to preserve device integrity
	Delayering chemistries: Nanoflat, Chase, and C-Maze for uniform removal
Automation & Control	Software: Tescan Delayering™ module with factory-defined recipes
	Monitoring: Live end-point detection and real-time signal tracking
	Workflow integration: Seamless transition to in situ nanoprobing
Sample Handling	Stage: Compucentric 5-axis motorized stage
	Optional: Piezo XYZ sub-stages of 3^rd party nanoprobing platforms Tescan for probing geometry control
	Holder: Dedicated clamp holder for low angle polishing of I/O layers
Nanoprobing & Characterization	Applications: PMOS/NMOS transistor probing, EFA-ready workflows
	Integration: In situ nanoprobing within the same platform
	Contrast imaging: Passive voltage contrast SEM for electrical inspection

SEM

Resolution: Ultra-high resolution at sub-100 eV with BrightBeam™ optics

Imaging modes: Secondary electrons, BSE, Passive Voltage Contrast SEM

FIB Preparation Process

Ion source: Mistral™ Xe⁺ plasma ion source (ECR type), source lifetime not limited

Max current: >3.3 µA at 30 keV for high-throughput large-area milling

Low keV capability: Gentle delayering to preserve device integrity

Delayering chemistries: Nanoflat, Chase, and C-Maze for uniform removal

Automation & Control

Software: Tescan Delayering™ module with factory-defined recipes

Monitoring: Live end-point detection and real-time signal tracking

Workflow integration: Seamless transition to in situ nanoprobing

Sample Handling

Stage: Compucentric 5-axis motorized stage

Optional: Piezo XYZ sub-stages of 3^rd party nanoprobing platforms Tescan for probing geometry control

Holder: Dedicated clamp holder for low angle polishing of I/O layers

Nanoprobing & Characterization

Applications: PMOS/NMOS transistor probing, EFA-ready workflows

Integration: In situ nanoprobing within the same platform

Contrast imaging: Passive voltage contrast SEM for electrical inspection

GET IN Touch

Where can you find us:

Tescan
Libušina třída 21
623 00 Brno
Czech Republic

130405923 us US 37.09024 -95.712891 25.3575 29.349345 20.67957527 42.082797 39.91384763 -33.693421 13.93320106 3.039986586 31.997988 38.050985 47.579533 48.1485965 58.375799 54.663142 19.195447 56.975106 50.493053 45.868592 10.79556993 44.35660598 43.2371604 55.536415 14.557577179752773 32.100937 -6.116829 -6.212299277967318 23.7104 -33.471062 31.998740087 -23.69149395 43.462349 51.529848 49.1893523 49.197486 25.072375 31.075811 1.299027 40.676979 52.30150662 51.013813 35.684121 37.479653 52.246622 40.581349 39.911632 -26.1811371 41.818215 33.429928 -12.08688

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