Tescan TENSOR 4D-STEM for Semiconductors

Name: Tescan TENSOR
Brand: Tescan

Achieve precise strain mapping, phase orientation analysis, and high-throughput compositional characterization with Tescan TENSOR.

This integrated analytical STEM platform with synchronized EDS and precession-assisted 4D-STEM systems is designed for advanced semiconductor device analysis. It delivers sub-2 nm resolution of precession-assisted 4D-STEM measurements, real-time data visualization, and fully automated beam alignment for consistent, reproducible results.

TENSOR delivers clarity, speed, and reliability across applications ranging from FinFET strain analysis to 3D NAND grain size mapping.

Integrated STEM imaging, EDS elemental analysis, and 4D-STEM mapping enhanced by beam precession in one platform

Real-time, interactive 4D-STEM and elemental analysis with immediate visualization of processed results in the Explore™ software

Automated alignment and tilt-to-zone-axis for reproducible results

Near-UHV conditions to protect samples from contamination

High-throughput acquisition with direct electron detector, Dectris Quadro, for crisp electron diffraction and 2.0 sr solid angle for efficient EDX data collection

Sub-2 nm resolution strain analysis for FinFET and nanosheet GAA architectures

Sub-2nm resolution phase-orientation mapping for fine grains in deposited layers

How Tescan TENSOR Enables Advanced 4D-STEM Analysis

Accelerate 4D-STEM Data Acquisition

Capture diffraction and EDS datasets in minutes instead of hours with high-speed beam precession, 100 kV electron acceleration, direct electron detection, and 2.0 sr collection solid angle for EDX signals.

Achieve Sub-2 nm resolution of Strain and Phase-Orientation Mapping

Resolve fine structural details in FinFETs, nanosheets, and 3D NAND devices for accurate strain engineering, process development, and defect analysis.

Automate Beam Alignments and Tilt to the Zone-Axis

Eliminate manual adjustments with fully automated alignments and tilt-to-zone-axis procedure for consistent, accurate, and reproducible results.

Protect Samples with Near-UHV Conditions

Prevent hydrocarbon contamination during extended analysis for uncompromised data quality and repeatable measurements.

Unify STEM, EDS, and Precession Diffraction

Streamline multimodal analysis in a single platform to correlate structural, chemical, and phase data efficiently.

Process and Visualize Data in Real Time with Explore™

Access live diffraction and elemental maps during acquisition for immediate interpretation and faster decision-making.

Software Overview

Explore™

The central interface for STEM imaging, EDS compositional analysis and mapping, precession diffraction, and 4D-STEM workflows. Process data on-the-fly and visualize results in real time with live overlays, pattern matching, and mapping tools—shortening the path from acquisition to actionable insight.

“TENSOR makes advanced STEM feel approachable. Explore™ gives us real-time data we used to wait hours for, and our team is up and running in days, not months.”

Dr. A. Brown
Materials Scientist
University of Leeds

Unlocked content

Why Choose Tescan TENSOR

for Semiconductors Process Development and Failure Analysis?

Get the most out of Tescan

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TESCAN TENSOR for Semiconductors

Technical specification

TENSOR	Accelerating Voltage: 100 kV (optimized for high scattering contrast and dose-limited resolution)
	STEM Resolution: 2.8 Å
	Beam Precession Frequency: Up to 72,000 Hz
	Diffraction Detector: Direct Electron (DED) - maximum frame rate 4,500 fps - dynamic range ~10⁷
	EDS System: Dual windowless detectors with 2.0 sr solid angle
	Vacuum System: Near-UHV vacuum in sample area (<10⁻⁶ Pa)
	Beam Blanking: Integrated electrostatic blanker, 1 MHz rate
	Precession Angle Range: 0.1° to 3.0°
	Automation Features: Beam alignments, Tilt to the zone axis, Measurement presets

TENSOR

Accelerating Voltage: 100 kV (optimized for high scattering contrast and dose-limited resolution)

STEM Resolution: 2.8 Å

Beam Precession Frequency: Up to 72,000 Hz

Diffraction Detector: Direct Electron (DED)
- maximum frame rate 4,500 fps
- dynamic range ~10⁷

EDS System: Dual windowless detectors with 2.0 sr solid angle

Vacuum System: Near-UHV vacuum in sample area (<10⁻⁶ Pa)

Beam Blanking: Integrated electrostatic blanker, 1 MHz rate

Precession Angle Range: 0.1° to 3.0°

Automation Features: Beam alignments, Tilt to the zone axis, Measurement presets

GET IN Touch

Where can you find us:

Tescan
Libušina třída 21
623 00 Brno
Czech Republic

130405923 us US 37.09024 -95.712891 25.3575 29.349345 20.67957527 42.082797 39.91384763 -33.693421 13.93320106 3.039986586 31.997988 38.050985 47.579533 48.1485965 58.375799 54.663142 19.195447 56.975106 50.493053 45.868592 10.79556993 44.35660598 43.2371604 55.536415 14.557577179752773 32.100937 -6.116829 -6.212299277967318 23.7104 -33.471062 31.998740087 -23.69149395 43.462349 51.529848 49.1893523 49.197486 25.072375 31.075811 1.299027 40.676979 52.30150662 51.013813 35.684121 37.479653 52.246622 40.581349 39.911632 -26.1811371 41.818215 33.429928 -12.08688

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