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Plasma FIB-SEM

Tescan
AMBER X

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Unleash High-Resolution 3D Imaging for Advanced Material Science Applications.

Gain deeper insights into the microstructure, composition, and performance of materials with Tescan AMBER X Plasma FIB-SEM. Designed for high-resolution 3D imaging and large-volume analysis, AMBER X enables precise cross-sectioning and reconstruction of complex materials, advancing research in energy storage, metals, ceramics, and nanomaterials.

  • High-Speed, Artifact-Free Cross-Sectioning with Xe Plasma FIB
  • Nanometer-Scale 3D Tomography for Microstructure Analysis
  • High-Speed, Artifact-Free Cross-Sectioning with Xe Plasma FIB
  • High-Speed, Artifact-Free Cross-Sectioning with Xe Plasma FIB

How Tescan AMBER X Empowers

High-Resolution 3D Material Analysis

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Tescan Instruments

for every electron microscopy 
workflow
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Correlative Imaging for Comprehensive Material Insights

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Correlative Imaging for Comprehensive Material Insights

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Tescan solutions

for battery development

Tescan Essence™ is a user-friendly graphical interface designed to streamline semiconductor failure analysis with intuitive navigation, customizable workflows, and automated processes.

Its integrated control of FIB-SEM, EDS, EBSD, and advanced imaging tools ensures seamless operation, reducing user workload and increasing reproducibility. With AI-driven automation and real-time data visualization, Tescan Essence™ enhances efficiency, making even complex analyses faster and more accessible to both expert and novice users.

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"Tescan AMBER X 2, our latest innovation in materials analysis technology. The AMBER X 2, with its advanced Plasma FIB-SEM capabilities, offers unmatched speed, precision, and versatility, setting a new standard in the field."
PETR KLIMEK
PRODUCT MARKETING DIRECTOR
MATERIAL & GEO SCIENCE
TESCAN
Unlocked content

Tescan AMBER X with iFIB+™ control and real-time SE signal end pointing delivers precise Sub-20 nm node delayering. Achieve planar surfaces below 5 nm RMS roughness, maintain dielectric compatibility, and prepare contamination-free structures ready for in-situ nanoprobing and electrical failure analysis.

Output Exmples

Common Challenges in High-Resolution Material Analysis

Advanced materials used in energy storage, aerospace, nanotechnology, and biomedical applications require in-depth structural insights. However, traditional imaging techniques often fall short when analyzing multi-phase structures, nanoscale defects, and buried interfaces.

FIB-SEM tomography addresses these challenges by providing:

  • Sub-nanometer precision in 3D imaging for detailed microstructural analysis.
  • Site-specific cross-sectioning to study buried features without sample destruction.
  • Multi-modal integration with EDS and EBSD for correlative material characterization.

FIB-SEM Tomography Workflow for 3D Material Characterization

Tescan’s FIB-SEM tomography workflow enables researchers to analyze materials at an unmatched resolution, revealing critical structural details that impact performance, durability, and failure mechanisms.

Key Workflow Steps:

01

Targeted Material Selection

Identifying the region of interest with SEM and correlative imaging.

02

Precision Ion Beam Milling

Identifying the region of interest with SEM and correlative imaging.

03

3D Image Acquisition & Reconstruction

Identifying the region of interest with SEM and correlative imaging.

Common Challenges in High-Resolution Material Analysis

Advanced materials used in energy storage, aerospace, nanotechnology, and biomedical applications require in-depth structural insights. However, traditional imaging techniques often fall short when analyzing multi-phase structures, nanoscale defects, and buried interfaces.

FIB-SEM tomography addresses these challenges by providing:

  • Sub-nanometer precision in 3D imaging for detailed microstructural analysis.
  • Site-specific cross-sectioning to study buried features without sample destruction.
  • Multi-modal integration with EDS and EBSD for correlative material characterization.

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Tescan Vega

Technical specification
SEM
Resolution
20 eV - 30 keV
Landing energy
0.6 nm @ 15 keV
1.0 nm @ 1 keV
STEM
Resolution @ 30 keV
0.7 nm
FIB preparation
process
Max material removal
100 nA
Optimal final polish
2 kV
SEM
Resolution
20 eV - 30 keV
Landing energy
0.6 nm @ 15 keV
1.0 nm @ 1 keV
STEM
Resolution @ 30 keV
0.7 nm
FIB preparation
process
Max material removal
100 nA
Optimal final polish
2 kV
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GET IN Touch

Contact us
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Your nearest office is:

Tescan Brno
Libušina tř. 21
623 00 Brno - Kohoutovice

Czech Republic

+420 530 353 411
info@Tescan.com